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mtd: nand: split BB marker options decoding into its own function

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When detecting NAND parameters, the code gets a little ugly so that the
logic is obscured. Try to remedy that by moving code to separate functions
that have well-defined purposes.

This patch splits the bad block marker options detection into its own function,
away from the other parameters (e.g., chip size, page size, etc.).

Signed-off-by: Brian Norris <computersforpeace@gmail.com>
Signed-off-by: Artem Bityutskiy <artem.bityutskiy@linux.intel.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
This commit is contained in:
Brian Norris 2012-09-24 20:40:49 -07:00 • committed by David Woodhouse
parent 4aef9b78de
commit 7e74c2d714
1 changed files with 39 additions and 27 deletions
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66
drivers/mtd/nand/nand_base.c
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@ -2905,6 +2905,43 @@ static int nand_flash_detect_onfi(struct mtd_info *mtd, struct nand_chip *chip,
return 1; return 1;
} }
/*
* Set the bad block marker/indicator (BBM/BBI) patterns according to some
* heuristic patterns using various detected parameters (e.g., manufacturer,
* page size, cell-type information).
*/
static void nand_decode_bbm_options(struct mtd_info *mtd,
struct nand_chip *chip, u8 id_data[8])
{
int maf_id = id_data[0];
/* Set the bad block position */
if (mtd->writesize > 512 || (chip->options & NAND_BUSWIDTH_16))
chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
else
chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
/*
* Bad block marker is stored in the last page of each block on Samsung
* and Hynix MLC devices; stored in first two pages of each block on
* Micron devices with 2KiB pages and on SLC Samsung, Hynix, Toshiba,
* AMD/Spansion, and Macronix. All others scan only the first page.
*/
if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(maf_id == NAND_MFR_SAMSUNG ||
maf_id == NAND_MFR_HYNIX))
chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(maf_id == NAND_MFR_SAMSUNG ||
maf_id == NAND_MFR_HYNIX ||
maf_id == NAND_MFR_TOSHIBA ||
maf_id == NAND_MFR_AMD ||
maf_id == NAND_MFR_MACRONIX)) ||
(mtd->writesize == 2048 &&
maf_id == NAND_MFR_MICRON))
chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
}
/* /*
* Get the flash and manufacturer id and lookup if the type is supported. * Get the flash and manufacturer id and lookup if the type is supported.
*/ */
@ -3087,6 +3124,8 @@ ident_done:
return ERR_PTR(-EINVAL); return ERR_PTR(-EINVAL);
} }
nand_decode_bbm_options(mtd, chip, id_data);
/* Calculate the address shift from the page size */ /* Calculate the address shift from the page size */
chip->page_shift = ffs(mtd->writesize) - 1; chip->page_shift = ffs(mtd->writesize) - 1;
/* Convert chipsize to number of pages per chip -1 */ /* Convert chipsize to number of pages per chip -1 */
@ -3103,33 +3142,6 @@ ident_done:
chip->badblockbits = 8; chip->badblockbits = 8;
/* Set the bad block position */
if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16))
chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
else
chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
/*
* Bad block marker is stored in the last page of each block
* on Samsung and Hynix MLC devices; stored in first two pages
* of each block on Micron devices with 2KiB pages and on
* SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
* All others scan only the first page.
*/
if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(*maf_id == NAND_MFR_SAMSUNG ||
*maf_id == NAND_MFR_HYNIX))
chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
(*maf_id == NAND_MFR_SAMSUNG ||
*maf_id == NAND_MFR_HYNIX ||
*maf_id == NAND_MFR_TOSHIBA ||
*maf_id == NAND_MFR_AMD ||
*maf_id == NAND_MFR_MACRONIX)) ||
(mtd->writesize == 2048 &&
*maf_id == NAND_MFR_MICRON))
chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;
/* Check for AND chips with 4 page planes */ /* Check for AND chips with 4 page planes */
if (chip->options & NAND_4PAGE_ARRAY) if (chip->options & NAND_4PAGE_ARRAY)
chip->erase_cmd = multi_erase_cmd; chip->erase_cmd = multi_erase_cmd;